| 摘要 |
PURPOSE: A semiconductor memory device comprising a page buffer to verify programmed memory cells is provided, which prevents an insufficient program due to the increase of a potential of a common source line of a plurality of memory cells, during a program verification operation after performing the program operation. CONSTITUTION: According to the semiconductor memory device, a memory cell array(10) has bit lines and word lines arranged as crossing each other, and has electrically programmable memory cells(MC0-MC15) arranged on the cross point of the bit lines and the word lines. The first transistor has a drain connected to a data line, and a source, and a gate connected to the first control signal. The first latch(110) has the first node connected to the source of the first transistor. The second transistor has a drain connected to a bit line selected among the bit lines, and a source, and a gate connected to the second control signal. The second latch(120) has the third node and the fourth node connected to the source of the second transistor and the data line. The third transistor has a drain connected to the fourth node of the second latch, and a source and a gate connected to the selected bit line. The fourth transistor has a drain connected to the fourth node of the second latch, and a source and a gate connected to the first node of the first latch. And the fifth transistor has a drain connected to the sources of the third and the fourth transistor, and a source connected to a ground voltage and a gate connected to the third control signal.
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