Magnetoresistive random access memory (MRAM) is used to provide in-pixel memory circuits for display devices. A memory circuit (25) comprises two MRAMs (60, 62), each coupled to a respective input of a flip-flop circuit (64). A display device (1) is provided comprising a plurality of pixels (20) each associated with a memory circuit (25). One of the MRAMs is a switchable MRAM (60), the other MRAM is a reference MRAM (62) arranged to provide a reference by which the changed states of the switchable MRAM (60) may be readily observed and measured in the form of a differential.
申请公布号
WO03096351(A2)
申请公布日期
2003.11.20
申请号
WO2003IB01748
申请日期
2003.04.29
申请人
KONINKLIJKE PHILIPS ELECTRONICS N.V.;VAN DER ZAAG, PIETER, J.;EDWARDS, MARTIN, J.;LENSSEN, KARS-MICHIEL, H.
发明人
VAN DER ZAAG, PIETER, J.;EDWARDS, MARTIN, J.;LENSSEN, KARS-MICHIEL, H.