| 摘要 |
The present invention provides a method for detecting instantaneously a flare noise within patterns of a semiconductor device, including the steps of: A method for detecting a flare noise in a semiconductor device, comprising the steps of: preparing a mask having a plurality of expose-areas having different light energy-levels when photo exposing and a plurality of dummy patterns with different sizes for detecting flare noises in each expose-area; forming dummy patterns on a wafer through a photolithography process with the mask; and detecting the flare noise by comparing the dummy patterns in each expose-area with optical microscope.
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