| 发明名称 |
Semiconductor device |
| 摘要 |
A semiconductor device includes an insulating oxide layer formed by oxidizing a nitride semiconductor and an electrode formed of a conductive metal oxide on the insulating oxide layer.
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| 申请公布号 |
US2003213975(A1) |
申请公布日期 |
2003.11.20 |
| 申请号 |
US20030417138 |
申请日期 |
2003.04.17 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO, LTD. |
发明人 |
HIROSE YUTAKA;INOUE KAORU;IKEDA YOSHITO |
| 分类号 |
H01L29/812;H01L21/338;H01L29/20;H01L29/778;H01L31/0328;(IPC1-7):H01L31/032 |
主分类号 |
H01L29/812 |
| 代理机构 |
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