TUNABLE RADIATION SOURCE PROVIDING A PLANAR IRRADIATION PATTERN FOR PROCESSING SEMICONDUCTOR WAFERS

摘要

A radiation source (10) constructed in accordance with the invention is particularly suited for use in processing semiconductor wafers. An exemplary embodiment of the invention includes a base electrode (30) having a two dimensional surface bounding one side of a radiation emitting region (35). An ionizable, excimer gas (35a) is present in the radiation emitting region. The excimer gas (35a), when energized, emits radiation in the UV region. A two dimensional dielectric radiation transmissive layer (34) bounds an opposite side of the radiation emitting region (35) and transmits radiation to a wafer treatment region. Disposed between the dielectric radiation transmissive layer (34) and a protective radiation transmissive window (36) is a two dimensional matrix or screen electrode (32) defining a plane generally parallel to the two dimensional surface of the base electrode (30) region. A power supply (33) coupled to the base and matrix electrodes (30, 32) to energize the electrodes (30, 32) and the eximer gas (35a) causing emission of UV radiation. The range of wavelengths transmitted to the wafer treatment region can be tuned by using a filter (190) disposed adjacent to the protective window (36) which functions to block transmission of selected wavelengths of emitted radiation.