发明名称 |
Method of manufacturing semiconductor device |
摘要 |
A thermal process for activating respective impurities in a polysilicon film to be a gate electrode and a resistance element is performed with the polysilicon film to be the gate electrode and the resistance element being coated with an oxide film, after the respective impurities are implanted into the polysilicon film to be the gate electrode and the resistance element. Here, concentrations of the respective impurities in the polysilicon film to be the gate electrode and the resistance element are adjusted by controlling the thickness of the oxide film. The degree of impurity activation is thereby adjusted.
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申请公布号 |
US2003216015(A1) |
申请公布日期 |
2003.11.20 |
申请号 |
US20020288458 |
申请日期 |
2002.11.06 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KAWASHIMA HIROSHI;IGARASHI MOTOSHIGE;HIGASHITANI KEIICHI |
分类号 |
H01L27/04;H01L21/02;H01L21/265;H01L21/324;H01L21/822;H01L21/8234;H01L27/06;H01L27/088;H01L29/78;(IPC1-7):H01L21/22 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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