| 摘要 |
PURPOSE: A method for manufacturing a PSM(Phase Shift Mask) is provided to be capable of improving uniformity of CD(Critical Dimension) of a rim region and exactly controlling the CD. CONSTITUTION: A chrome film(12) is deposited on a quartz substrate(11). A desired portion of the chrome film(12) is selectively etched to define a contact hole region. The first sacrificial spacer is formed at both sidewalls of the chrome film(12). The second sacrificial spacer is formed at both sidewalls of the chrome film. The upper portion of the contact hole region of the exposed quartz substrate(11) is selectively removed by anisotropic etching. The first and second sacrificial spacer are removed. At this time, the size of a rim region is easily controlled by the first and second sacrificial spacer.
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