In-situ thermal chamber cleaning

摘要

A cost-effective and environmentally benign cleaning method is provided which comprises introducing an etch gas into the chamber, performing a first cleaning process to remove the deposited materials at a high rate, and performing a second cleaning process to remove the deposited materials at a high etch selectivity with respect to the materials forming the chamber. The first cleaning process is performed at a first pressure, the second cleaning process is performed at a second pressure. The second pressure is substantially lower than the first pressure to enhance the etching selectivity.