发明名称 Method integrating polymeric interlayer dielectric in integrated circuits
摘要 A method of integrating a polymeric interlayer dielectric. The method comprises forming a dielectric layer comprising a polymer on a conductive layer formed on a substrate. A sacrificial hard mask is then formed on the dielectric layer. A first photoresist layer is then patterned on the sacrificial hard mask to define a first etched region, which is formed through the dielectric layer while substantially all of the first photoresist layer is removed. A sacrificial fill layer then covers the sacrificial hard mask and fills the first etched region. A second photoresist layer is patterned over the sacrificial fill layer to define a second etched region which is formed through the sacrificial fill layer and the dielectric layer while substantially all of the second photoresist layer and the sacrificial fill layer are simultaneously removed.
申请公布号 US2003216057(A1) 申请公布日期 2003.11.20
申请号 US20020150617 申请日期 2002.05.17
申请人 HUSSEIN MAKAREM A.;BRAIN RUTH;TURKLOT ROBERT;SIVAKUMAR SAM 发明人 HUSSEIN MAKAREM A.;BRAIN RUTH;TURKLOT ROBERT;SIVAKUMAR SAM
分类号 H01L21/768;(IPC1-7):H01L21/469 主分类号 H01L21/768
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