| 发明名称 |
SUPER SELF-ALIGNED COLLECTOR DEVICE FOR MONO-AND HETERO BIPOLAR JUNCTION TRANSISTORS, AND METHOD OF MAKING SAME |
| 摘要 |
The invention relates to a process of forming a compact bipolar junction transistor (BJT) that includes forming a self-aligned collector tap adjacent the emitter stack and an isolated structure. A base layer is formed from epitaxial silicon that is disposed in the substrate. |
| 申请公布号 |
WO03050881(A3) |
申请公布日期 |
2003.11.20 |
| 申请号 |
WO2002US39408 |
申请日期 |
2002.12.10 |
| 申请人 |
INTEL CORPORATION |
发明人 |
AHMED, SHAHRIAR;BOHR, MARK;CHAMBERS, STEPHEN;GREEN, RICHARD |
| 分类号 |
H01L21/331;H01L21/8249;H01L27/06;H01L29/08 |
主分类号 |
H01L21/331 |
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