| 发明名称 |
Monatomic boron ion source and method |
| 摘要 |
Monotomic boron ions for ion implantation are supplied from decaborane vapour. The vapour is fed to a plasma chamber and a plasma produced in the chamber with sufficient energy density to disassociate the decaborane molecules to produce monatomic boron ions in the plasma.
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| 申请公布号 |
US2003216014(A1) |
申请公布日期 |
2003.11.20 |
| 申请号 |
US20030394665 |
申请日期 |
2003.03.24 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
GOLDBERG RICHARD DAVID |
| 分类号 |
C23C14/00;G21K5/10;H01J37/08;H01L21/04;H01L21/42;H01L21/425;(IPC1-7):H01L21/04 |
主分类号 |
C23C14/00 |
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