| 摘要 |
<p>A simple metal dielectric semiconductor (MDS) variable capacitor which may be a MOS capacitor uses the drain and source of a floating gate metal dielectric semiconductor field effect transistor connected to the bulk of the semiconductor substrate as one plate of the capacitor and the gate of the transistor as the other plate. The capacitance is voltage dependent and is strongly nonlinear in the depletion region. The accumulation and strong inversion regions are also nonlinear, but to a much smaller degree. The nonlinearity can be significantly reduced by connecting two of the capacitors in series. This series connection also makes possible a capacitor structure with an isolated floating gate connecting the two series capacitors. The charge on the floating gate can be controlled by tunneling and injection to vary the capacitor bias voltage and thus, its capacitance. Alternatively, the capacitors may operate in the accumulation region. In this configuration the accumulation capacitors do not require transistors nor do they require source and drain regions. The capacitance appears between the floating gate and the bulk (well). In other respects they operate as described above.</p> |
