| 摘要 |
<p>A method for manufacturing a SON semiconductor substrate of high quality at low cost and a method for manufacturing a semiconductor device of high performance by conducting the semiconductor substrate manufacturing method during the manufacturing process are disclosed. Ions are selectively implanted into a predetermined region in a substrate, and microvoids are formed in the predetermined region by the implanted ions. By subjecting the substrate to a thermal treatment, the microvoids are grown and mutually adjacent microvoids are united thereby to form an insulating region composed of a void extending in the predetermined region.</p> |
