发明名称 |
Semiconductor device used in silicon microelectronics comprises a first substrate with an integrated component, a second substrate with an integrated repeater, a coupling layer arranged between the substrates, and a contacting element |
摘要 |
Semiconductor device comprises a first substrate (101) with an integrated component (102), a second substrate (103) with an integrated repeater (104), a coupling layer (105) arranged between the substrates, and a contacting element (106) for electrically coupling the component to the repeater. An Independent claim is also included for a process for the production of the semiconductor device. |
申请公布号 |
DE10213546(C1) |
申请公布日期 |
2003.11.20 |
申请号 |
DE2002113546 |
申请日期 |
2002.03.26 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
ENGELHARDT, MANFRED |
分类号 |
H01L21/768;H01L25/065;(IPC1-7):H01L23/522 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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