发明名称 |
V-shape magnetic field sensor with anisotropy induced orthogonal magnetic alignment |
摘要 |
A magnetoresistive sensor having two free layers with shape anisotropy induced magnetic alignment is disclosed. The magnetoresistive sensor includes a first ferromagnetic free layer having a first quiescent state magnetization direction. The magnetoresistive sensor also includes a second elongated free layer having a second quiescent state magnetization direction and positioned such that the first quiescent state magnetization direction is generally orthogonal to the second quiescent state magnetization direction. Further, a portion of the second ferromagnetic free layer overlaps a portion of the first ferromagnetic free layer proximal to an air bearing surface to form a v-shape. A nonmagnetic spacer layer is also positioned between the first ferromagnetic free layer and the second ferromagnetic free layer.
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申请公布号 |
US2003214764(A1) |
申请公布日期 |
2003.11.20 |
申请号 |
US20020304663 |
申请日期 |
2002.11.26 |
申请人 |
SEAGATE TECHNOLOGY LLC |
发明人 |
SAPOZHNIKOV VICTOR BORIS;POKHIL TARAS GRIGORYEVICH;HEINONEN OLLE GUNNAR;NOWAK JANUSZ JOZEF |
分类号 |
G01R33/09;G11B5/012;G11B5/31;G11B5/39;(IPC1-7):G11B5/39 |
主分类号 |
G01R33/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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