发明名称 SEMICONDUCTOR DEVICE
摘要 The bump underlying metal film has a first metallic deposit film formed by a first electroless plating method, and a second metallic deposit film formed on the first metallic deposit film by a second electroless plating method using a plating solution different in type from that used in the first electroless plating method. The bump underling metal film is so arranged that the first metallic deposit film has a thickness larger than the organic insulating film, and the first metallic deposit film has a peripheral portion superposed on the organic insulating film.
申请公布号 US2003214038(A1) 申请公布日期 2003.11.20
申请号 US20020303737 申请日期 2002.11.26
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 NEMOTO YOSHIHIKO
分类号 H01L21/288;H01L21/60;H01L23/485;(IPC1-7):H01L23/48;H01L23/52 主分类号 H01L21/288
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