发明名称 |
Method and apparatus for sputter deposition |
摘要 |
A physical vapor deposition chamber is employed to sputter-deposit a layer of material, such as a tantalum or tantalum nitride barrier layer, in a via formed on a semiconductor substrate. After the sputter-deposition step, a second processing step is performed in which material from the barrier layer is back-sputtered from the bottom wall of the via. The second step is performed at a high pedestal bias and with substantial power applied to the sputtering target. The power applied to the sputtering target in the second step may be at a higher level than the power applied to the sputtering target in the first step. Numerous other aspects are provided.
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申请公布号 |
US2003216035(A1) |
申请公布日期 |
2003.11.20 |
申请号 |
US20030439021 |
申请日期 |
2003.05.14 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
RENGARAJAN SURAJ;MILLER MICHAEL;ANGELO DARRYL;MAITY NIRMALYA;DING PEIJUN |
分类号 |
C23C14/04;C23C14/06;C23C14/18;C23C14/58;H01L21/285;H01L21/768;(IPC1-7):C23C14/00;C23C14/32;H01L21/476 |
主分类号 |
C23C14/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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