发明名称 CAVITY SHAPES FOR PLASMA-ASSISTED PROCESSING
摘要 <p>Methods and apparatus for selectively processing objects with a plasma formed in a cavity (12) with electromagnetic radiation. In one embodiment, a method can be provided that includes placing the object in the cavity (12) such that a first gap (525) is formed, having a thickness less than about λ/4, between a first surface region (510) of the object and the inner surface of the cavity, and a second gap (526) is formed, having a thickness at least about λ /4, between a second surface region (520) and the inner surface, introducing gas into the cavity; and irradiating the cavity with the radiation to form a plasma in the second gap but not in the first gap.</p>
申请公布号 WO2003096383(P1) 申请公布日期 2003.11.20
申请号 US2003014137 申请日期 2003.05.07
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