发明名称 Photoelectric conversion device manufacturing method thereof, and x-ray imaging system including the device
摘要 In order to provide a photoelectric conversion device of high S/N ratio or high resolution in which the outputs of sensor cells except any defective sensor cell can be made to have normal values, thereby to obtain data of higher precision, any switching element that does not operate normally is removed in a photoelectric conversion device wherein a plurality of sensor cells, in each of which a photoelectric element and a switching element are connected, are arrayed in two dimensions on a substrate. <IMAGE>
申请公布号 EP0978879(A3) 申请公布日期 2003.11.19
申请号 EP19990306040 申请日期 1999.07.29
申请人 CANON KABUSHIKI KAISHA 发明人 KOBAYASHI, ISAO
分类号 G01T1/20;H01L27/146;H01L31/02 主分类号 G01T1/20
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