| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of filling plating into a bottomed hole by which cavities generating inside the bottomed hole can be reduced even in the case of the bottomed hole having a high aspect ratio. SOLUTION: A plating liquid in which the concentration of CuSO<SB>4</SB>5H<SB>2</SB>O is controlled to 130 to 180 (g/L), the concentration of H<SB>2</SB>SO<SB>4</SB>is controlled to 180 to 220 (g/L), the concentration of Cl<SP>-</SP>is controlled to 100 to 1,000 (mg/L), the concentration of an accelerator containing sulfur is controlled to 0.1 to 7.5 (mg/L), and the concentration of an inhibitor consisting of a polymer is controlled to 400 to 2,000 (mg/L) is used. DC current is used for plating current, and current density to the opening area of a bottomed hole 23 is controlled to 0.1 to 3 mA/cm<SP>2</SP>. Thus, Cu plating can be deposited from the bottom face and side face of the bottomed hole while suppressing the formation of Cu plating at the opening part of the bottomed via hole 23. COPYRIGHT: (C)2004,JPO
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