发明名称 MAGNETRON SPUTTERING DEVICE
摘要 PROBLEM TO BE SOLVED: To solve the conventional problem that a used target has to be replaced if particles start to emerge. SOLUTION: The magnetron sputtering device 1 is capable of switching the range of magnetic fluxes 16a, 16b between the one smaller than the target 13 and the one larger than the target 13 and its backing plate 14. The range of the magnetic fluxes 16a, 16b is switched by a doughnut-shaped magnetic shielding material 19 under a magnet 15. For the film forming on the surface of a wafer 11, the range of the magnetic flux 16a is made smaller than the target 13. Cleaning is performed by removing the magnetic shielding material 19 and making the range of the magnetic flux 16b larger than the target 13 and the backing plate 14. COPYRIGHT: (C)2004,JPO
申请公布号 JP2003328121(A) 申请公布日期 2003.11.19
申请号 JP20020131119 申请日期 2002.05.07
申请人 NEC KANSAI LTD 发明人 YANAGIMORI EIJI
分类号 C23C14/35;H01L21/285;(IPC1-7):C23C14/35 主分类号 C23C14/35
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