| 摘要 |
A gate electrode 12 is formed on a silicon substrate 10 via a gate insulating film 11. The gate insulating film 11 includes a high dielectric constant film 11a made of a hafnium oxide film containing silicon, and a lower barrier film 11b formed below the high dielectric constant film 11a and made of a silicon oxynitride film containing hafnium. <IMAGE>
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