发明名称 Apparatus and method for determining electrical properties of a semiconductor wafer
摘要 <p>An apparatus for measuring an electrical property of a semiconductor wafer includes a probe having an electrically conductive tip formed at least in part of a material that is transparent to light and a probe guard disposed adjacent the electrically conductive tip. The apparatus includes a device for selectively applying a first electrical stimulus between a semiconductor wafer and the electrically conductive tip of each probe when it is positioned in spaced relation to the semiconducting material forming the semiconductor wafer, and a device for selectively applying a second electrical stimulus between the semiconductor wafer and the probe guard of each probe. A device for measuring a response of the semiconductor wafer to the electrical stimuli and for determining from the response at least one electrical property thereof is provided. A light source can be positioned to selectively emit light through the transparent material toward the semiconductor wafer.</p>
申请公布号 EP1363323(A2) 申请公布日期 2003.11.19
申请号 EP20030076094 申请日期 2003.04.11
申请人 SOLID STATE MEASUREMENTS, INC. 发明人 HOWLAND, WILLIAM H.
分类号 G01R1/067;G01R1/073;G01R31/26;G01R31/28;G01R31/302;H01L21/66;(IPC1-7):H01L21/66 主分类号 G01R1/067
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