| 摘要 |
PROBLEM TO BE SOLVED: To provide a system and a method for vapor deposition by which, when a shutter is opened after gas discharging operation to initiate vapor deposition onto an object to be treated, the time-lag from the point of time immediately after the shutter is set to an open state to the point of time when the power of an electron gun is stably controlled by the signals from a first film thickness monitor can be compensated and the desired film deposition rate (or power of the electron gun) can be obtained from immediately after the shutter is set to an open state. SOLUTION: The vapor deposition system 101 is constituted of a chamber 2, a substrate holder 4 for holding a semiconductor substrate 3, a hearth 6 for holding a vapor deposition material 5, the electron gun 8, a focusing coil 9, a deflecting coil 10, the shutter 11 for discharging and cutting-off a vapor deposition flow from the vapor deposition material 5, the first film thickness monitor 12 disposed in the vicinity of the semiconductor substrate 3 and used for measuring film deposition rate, a second film thickness monitor 102 disposed between the vapor deposition material 5 and the shutter 11, and a power control section 103 for controlling the power of the electron gun 8 on the basis of the signals from the first film thickness monitor 12 and the second film thickness monitor 102. COPYRIGHT: (C)2004,JPO
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