| 摘要 |
PURPOSE: An etching chemical for manufacturing a semiconductor device having fine line width and an etching method using the same are provided to be capable of reducing working time, decreasing fabrication cost, and improving the quality of the semiconductor device. CONSTITUTION: After carrying out an exposure process and a development process for forming a mask pattern at the upper portion of a semiconductor substrate, a multi-layer structure thin film is selectively etched by using the mask pattern(ST200,ST202,ST204). At this time, the etching process is carried out by using etching chemical mixed with CF4, SF6, O2, and catalyst. Then, an ashing process is carried out at the semiconductor substrate(ST206). A strip process is carried out at the ashing process completed semiconductor substrate(ST208).
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