发明名称 |
METHOD FOR MAKING NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MAKING NITRIDE SEMICONDUCTOR DEVICE |
摘要 |
<p>On a sapphire base (701), a GaN layer (702) and a substrate separating layer (703) are sequentially deposited, and the GaN layer (702) and the substrate separating layer (703) are processed to have a plurality of ridge stripes (702a) and recess portions (702b). Subsequently, a GaN based semiconductor layer (706) is grown on a C surface (703c) of the substrate separating layer (703) exposed on top of ridge stripes (702a) as seed crystal. The C surface (703c) of the substrate separating layer (703) is irradiated with a laser beam (802) to remove the substrate separating layer (703), thereby separating the GaN based semiconductor layer (706) from the sapphire base (701). <IMAGE></p> |
申请公布号 |
EP1363318(A1) |
申请公布日期 |
2003.11.19 |
申请号 |
EP20020786160 |
申请日期 |
2002.12.20 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
FURUYA, HIROYUKI;YOKOGAWA, TOSHIYA;ISHIBASHI, AKIHIKO;HASEGAWA, YOSHIAKI |
分类号 |
H01L21/20;H01S5/02;H01S5/323;(IPC1-7):H01L21/20;H01S5/22;H01L21/205;H01L21/268 |
主分类号 |
H01L21/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|