发明名称 Single photon emission process, semiconductor device and fabrication process thereof
摘要 <p>An integrated circuit, incorporating a semiconductor device forming the source of a single photon, comprises on a silicon substrate (SB): (a) a MOS transistor (TR) having a grid in the shape of a mushroom, capable of delivering on its drain, in a controlled manner, a single electron in response to a control voltage applied on its grid; (b) at least one compatible silicon quantum box (BQ), electrically coupled to the drain region (D) of the transistor, and capable of emitting a single photon on the reception of a single electron emitted by the transistor. Independent claims are also included for: (a) a cryptographic device incorporating this integrated circuit; (b) a method for the fabrication of this integrated circuit; (c) a method for the emission of a single photon using this integrated circuit.</p>
申请公布号 EP1363372(A1) 申请公布日期 2003.11.19
申请号 EP20030291031 申请日期 2003.04.28
申请人 STMICROELECTRONICS S.A. 发明人 MONFRAY, STEPHANE;DUTARTRE, DIDIER;BOEUF, FREDERIC
分类号 H01S5/34;(IPC1-7):H01S5/34;H04L9/08 主分类号 H01S5/34
代理机构 代理人
主权项
地址