High electric resistance magnetic film

摘要

The present invention provides a magnetic film expressed by a composition formula TaMbXcNdOe (T is a magnetic metal such as Fe, M is an alkaline earth metal such as Be, Mg, and Ca, and X is at least one selected from the group consisting of Y, Ti, Zr, Hf, V, Nb, Ta and lanthanoid), where a + b + c + d + e = 100, 45 </= a </= 85, 5.5 </= b </= 28, 0.5 </= c </= 16, 6 </= b + c </= 28.5, 0.4 < b/c </= 56, 0 </= d </= 10, and 8 </= d + e </= 40. The magnetic film comprises mainly metal magnetic crystal grains having an average crystal grain diameter of not more than 15nm and a grain boundary product. The grain boundary product substantially separates the metal magnetic crystal grains. The main component of the metal magnetic crystal grains is the T. The grain boundary product contains at least an oxide or a nitride of the M and the X. The magnetic film has a saturation magnetic flux density of not less than 0.8T and an electric resistivity of not less than 80 mu OMEGA cm.