发明名称 RAPID THERMAL PROCESSING SYSTEM FOR INTEGRATED CIRCUITS
摘要 In a rapid thermal processing system an array of heat lamps generate radiant heat for heating the surfaces of a semiconductor substrate, such as a semiconductor wafer, to a selected temperature or set of temperatures while held within an enclosed chamber. The heat lamps are surrounded individually or in groups by one or more optically transparent enclosures that isolate the heat lamps from the chamber environment and the wafer or wafers therein. The optically transparent enclosures may include associated reflectors and/or lenses to direct a higher proportion of emitted radiant heat energy from the lamps toward the semiconductor wafer(s). Thin planar quartz liners may also be interposed between the lamps and the substrate. By controlling radiant energy distribution within the chamber, and eliminating thick planar quartz windows commonly used to isolate the lamps in prior art RTP systems, higher processing rates and improved reliability are obtained.
申请公布号 KR20030088504(A) 申请公布日期 2003.11.19
申请号 KR20037013513 申请日期 2003.10.15
申请人 发明人
分类号 H01L21/31;H01L21/324;H01L21/00;H01L21/26 主分类号 H01L21/31
代理机构 代理人
主权项
地址