发明名称 |
ESD protection by a high-to-low resistance shunt |
摘要 |
A method and apparatus for protecting a thin film sensor such as a magnetoresistive head from damaging electrical transients, such as electrostatic discharge. A thin film sensor assembly includes a thin film sensor in electrical contact with a first and a second electrical contact. A shunting structure is deposited between and in electrical communication with the first and second electrical contacts such that the shunting structure as deposited is a high resistance path between the first and second electrical contacts and does not electrically short the first and second electrical contacts. Heat treating the shunting structure then forms a low resistance path between the first and second electrical contacts to provide protection of the sensor from electrostatic discharge.
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申请公布号 |
US6650519(B1) |
申请公布日期 |
2003.11.18 |
申请号 |
US20000641144 |
申请日期 |
2000.08.17 |
申请人 |
SEAGATE TECHNOLOGY LLC |
发明人 |
KARR BRIAN WILLIAM;STOVER LANCE EUGENE;HINTZ MICHAEL BERRY |
分类号 |
G11B5/33;G11B5/39;G11B5/40;G11B5/48;(IPC1-7):H02H9/00 |
主分类号 |
G11B5/33 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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