发明名称 ESD protection by a high-to-low resistance shunt
摘要 A method and apparatus for protecting a thin film sensor such as a magnetoresistive head from damaging electrical transients, such as electrostatic discharge. A thin film sensor assembly includes a thin film sensor in electrical contact with a first and a second electrical contact. A shunting structure is deposited between and in electrical communication with the first and second electrical contacts such that the shunting structure as deposited is a high resistance path between the first and second electrical contacts and does not electrically short the first and second electrical contacts. Heat treating the shunting structure then forms a low resistance path between the first and second electrical contacts to provide protection of the sensor from electrostatic discharge.
申请公布号 US6650519(B1) 申请公布日期 2003.11.18
申请号 US20000641144 申请日期 2000.08.17
申请人 SEAGATE TECHNOLOGY LLC 发明人 KARR BRIAN WILLIAM;STOVER LANCE EUGENE;HINTZ MICHAEL BERRY
分类号 G11B5/33;G11B5/39;G11B5/40;G11B5/48;(IPC1-7):H02H9/00 主分类号 G11B5/33
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