Body-to-substrate contact structure for SOI device and method for fabricating same

摘要

The semiconductor substrate body-substrate contact structure for a SOI device includes an SOI substrate having a semiconductor substrate, a buried insulating film formed on an upper surface of the semiconductor substrate, and a semiconductor body layer formed on an upper surface of the buried insulating film. The SOI substrate includes a trench exposing an upper surface of the semiconductor substrate, and semiconductive side wall spacers are formed on side walls of the trench. A device isolation insulating film is formed in the trench.