发明名称 |
Thin-film transistor substrate and liquid crystal display |
摘要 |
A source line is directly connected to a source terminal composed of indium zinc oxide in a thin-film transistor substrate. A gate line is directly connected to a gate terminal composed of indium zinc oxide. Alternatively, drain electrodes of thin-film transistors for switching a plurality of pixel electrodes are directly connected to pixel electrodes composed of indium zinc oxide. These configurations do not require a passivation film which is essential for conventional thin-film transistor substrates, and the resulting thin-film transistor substrate can be made by a reduced number of manufacturing steps.
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申请公布号 |
US6649936(B1) |
申请公布日期 |
2003.11.18 |
申请号 |
US20000526150 |
申请日期 |
2000.03.15 |
申请人 |
LG. PHILIPS LCD CO., LTD. |
发明人 |
SUNG CHAE GEE;CHUL JO GYOO;SASAKI MAKOTO;ARAI KAZUYUKI |
分类号 |
G09F9/30;G02F1/1343;G02F1/136;G02F1/1362;G02F1/1368;G09F9/00;H01L21/336;H01L21/77;H01L27/12;H01L29/45;H01L29/786;(IPC1-7):H01L31/039 |
主分类号 |
G09F9/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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