发明名称 Thin-film transistor substrate and liquid crystal display
摘要 A source line is directly connected to a source terminal composed of indium zinc oxide in a thin-film transistor substrate. A gate line is directly connected to a gate terminal composed of indium zinc oxide. Alternatively, drain electrodes of thin-film transistors for switching a plurality of pixel electrodes are directly connected to pixel electrodes composed of indium zinc oxide. These configurations do not require a passivation film which is essential for conventional thin-film transistor substrates, and the resulting thin-film transistor substrate can be made by a reduced number of manufacturing steps.
申请公布号 US6649936(B1) 申请公布日期 2003.11.18
申请号 US20000526150 申请日期 2000.03.15
申请人 LG. PHILIPS LCD CO., LTD. 发明人 SUNG CHAE GEE;CHUL JO GYOO;SASAKI MAKOTO;ARAI KAZUYUKI
分类号 G09F9/30;G02F1/1343;G02F1/136;G02F1/1362;G02F1/1368;G09F9/00;H01L21/336;H01L21/77;H01L27/12;H01L29/45;H01L29/786;(IPC1-7):H01L31/039 主分类号 G09F9/30
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