发明名称 |
Self-aligned, planarized thin-film transistors, devices employing the same |
摘要 |
A semiconductor device is presented which includes a self-aligned, planarized thin-film transistor which can be used in various integrated circuit devices, such as static random access memory (SRAM) cells. The semiconductor device has a first field-effect transistor and a second field-effect transistor. The second field-effect transistor overlies the first field-effect transistor, and the first field-effect transistor and the second field-effect transistor share a common gate. The second field-effect transistor includes a source and a drain which are self-aligned to the shared gate in a layer of planarized seminconductor material above the first field-effect transistor. In one embodiment, the second field-effect transistor is a thin-film transistor, and the shared gate has a U-shape wrap-around configuration at a body of the thin-film transistor.
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申请公布号 |
US6649935(B2) |
申请公布日期 |
2003.11.18 |
申请号 |
US20010795535 |
申请日期 |
2001.02.28 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HSU LOUIS L.;MANDELMAN JACK ALLAN;TONTI WILLIAM ROBERT;WANG LI-KONG |
分类号 |
H01L21/336;H01L21/8244;H01L27/11;H01L29/423;H01L29/786;(IPC1-7):H01L29/76;H01L31/036;H01L31/112 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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