发明名称 |
Method of manufacturing MOSFET and structure thereof |
摘要 |
A method of manufacturing an MOSFET. A substrate is provided. A trench filled with an insulating layer is formed in the substrate. The upper portion of the insulating layer is removed and then a spacer is formed on the side-wall of the trench. A sacrificial layer is formed to fill the trench. A doped semiconductive layer is formed over the substrate and then patterned to form a device region, wherein the device region spans the sacrificial layer to expose a portion of the sacrificial layer. The sacrificial layer is removed. A gate dielectric layer is formed on the exposed surface of the device region. A conductive layer is formed on the gate dielectric layer and then patterned to form a horizontal surround gate surrounding the device region. A source/drain region is formed in a portion of the substrate adjacent to the device region.
|
申请公布号 |
US6649979(B2) |
申请公布日期 |
2003.11.18 |
申请号 |
US20010005624 |
申请日期 |
2001.12.04 |
申请人 |
WINBOND ELECTRONICS CORP. |
发明人 |
JANG WEN-YUEH |
分类号 |
H01L21/336;H01L29/423;H01L29/78;H01L29/786;(IPC1-7):H01L27/01;H01L27/12;H01L31/113 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|