| 摘要 |
The system and method disclosed employ one or more switchable, close proximity electromagnets as part of the MRAM device circuit package to apply external magnetic fields to the magnetic elements and conductive lines of the MRAM array. A magnetic field generated by an electromagnet spanning all or part of an MRAM array could be used to selectively erase the MRAM array in whole or in part, respectively. In addition, the magnetic fields could be generated to support the magnetic fields sought to be induced by application of current to the row and column lines of the MRAM array, allowing for the writing of data to magnetic elements in the MRAM array using less power. In additional, diagonally disposed electromagnets could be used to generate these magnetic fields, and could also be used to demagnetize the row and column lines of the MRAM array.
|
