发明名称 |
Methods and systems for controlling resist residue defects at gate layer in a semiconductor device manufacturing process |
摘要 |
Methods and systems are disclosed for reducing resist residue defects in a semiconductor manufacturing process. The methods comprise appropriate adjustment of hardware, substrate, resist, developer, and process variables in order to remove resist residues from a semiconductor substrate structure in order to reduce resist residue defects therein. The method may comprise employing an anti reflective coating prior to applying a photo resist coating in a semiconductor manufacturing process. Also disclosed are methodologies for exhausting resist residue during development via a rinsing fluid.
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申请公布号 |
US6649525(B1) |
申请公布日期 |
2003.11.18 |
申请号 |
US20020050485 |
申请日期 |
2002.01.16 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
PHAN KHOI A.;ERHARDT JEFFREY;CHENG JERRY;BARTLETT RICHARD J.;CONIGLIO ANTHONY P.;GRUNDKE WOLFRAM;BRADWAY CAROL M.;SUTTON DANIEL E.;MAZUR MARTIN |
分类号 |
G03F7/16;G03F7/30;G03F7/40;H01L21/027;H01L21/3213;(IPC1-7):H01L21/461 |
主分类号 |
G03F7/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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