Single substrate processing film forming method

摘要

A single substrate processing film forming method including depositing an amorphous metal oxide film on a target substrate by chemical vapor deposition and reforming the metal oxide film in a reforming gas to remove an organic impurity contained in the film. The reforming gas is mixture of an excited oxygen gas with a non-excited oxygen gas. The reformation heats the film to a temperature higher than a crystallization temperature of the amorphous metal oxide film to perform crystallization at the same time.