| 摘要 |
<P>PROBLEM TO BE SOLVED: To form an opening of a specified size at a specified position on the surface of a semiconductor substrate by forming a through hole in the semiconductor substrate from the rear surface 1b to the front surface 1a thereof. <P>SOLUTION: A groove-like guide 2 with a width of approx. 1 μm is formed in the semiconductor substrate 1 (A). A lattice defect 12 is introduced around the guide 2 (B). An integrated circuit 4 is formed on a surface film 3 covering the guide 2 (C, D). Then, a through hole 14 is formed up to the tip of the guide 11 by etching from the rear surface of the substrate (E). Next, the through hole 14 is passed to the front surface by an anisotropic etching (F). A part of the surface film 3 remaining in the through hole 14 is removed (G), and the width of the through hole 14 is increased to a specified width by etching (H). <P>COPYRIGHT: (C)2004,JPO |
