发明名称 Nitride film
摘要 A Group III nitride film is directly grown on a crystalline substrate along the C-axis of the substrate, and includes at least Al. The Group III nitride film has a hexagonal crystal system, and the lattice constant "c" of the c-axis of the Group III nitride film and the lattice constant "a" of the crystal face perpendicular to the main surface of the substrate satisfies the relation of "C>2.636a-3.232".
申请公布号 US6649288(B2) 申请公布日期 2003.11.18
申请号 US20010981295 申请日期 2001.10.16
申请人 NGK INSULATORS, LTD. 发明人 SHIBATA TOMOHIKO;NAKAMURA YUKINORI;TANAKA MITSUHIRO
分类号 C30B29/38;C30B25/02;H01L21/20;H01L21/205;H01L33/32;(IPC1-7):B32B9/04 主分类号 C30B29/38
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