发明名称 |
Method for the formation and lift-off of porous silicon layers |
摘要 |
A method for the manufacture, formation, and removal of porous layers in a semiconductor substrate having at least a surface acting as a cathode. The method comprises applying a solution comprising negative Fluorine (F<->) ions between the surface of the semiconductor substrate and an anode. The method further comprises applying a predetermined current between the anode and the cathode. The method further comprises maintaining the predetermined current at substantially the same current value for a sufficient amount of time to obtain a low porosity layer at said surface. A high porosity layer positioned under the low porosity layer is also obtained by the method of the invention.
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申请公布号 |
US6649485(B2) |
申请公布日期 |
2003.11.18 |
申请号 |
US20010802756 |
申请日期 |
2001.03.09 |
申请人 |
INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM (IMEC) |
发明人 |
SOLANKI CHETAN SINGH;BILYALOV RENAT;POORTMANS JEF;BEAUCARNE GUY |
分类号 |
H01L21/306;H01L21/3063;H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/306 |
代理机构 |
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地址 |
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