Supporting gate contacts over source region on MOSFET devices

摘要

Increasing the number of MOSFET gate bump contacts makes MOSFET gate contacts more durable and reliable. Extension of the under-bump metal laterally from the gate contact with the gate pad metallization out to two or more gate pads overlying the source pad metallization reduces the risk of delamination of the metallization due to thermal and mechanical stresses in assembly and operation. Use of more than one gate pad further reduces such failure risks. The result is a reliable, durable MOSFET gate contact.