发明名称 On chip programmable data pattern generator for semiconductor memories
摘要 A semiconductor memory chip in accordance with the present invention includes a first memory array to be tested including a plurality of memory cells arranged in rows and columns, the memory cells being accessed to read and write data thereto by employing bitlines and wordlines, the data provided on input/output pins, and a pattern generator formed on the memory chip. The pattern generator further includes a programmable memory array including a plurality of memory banks, the memory banks having memory cells arranged in rows and columns, each bank being capable of storing data for a pattern to be generated for each of the input/output pins of the first memory array. An addressing circuit for accessing the data stored in the programmable memory array to address individual data to be transmitted to and from the first memory array is included.
申请公布号 US6651203(B1) 申请公布日期 2003.11.18
申请号 US19990312974 申请日期 1999.05.17
申请人 INFINEON TECHNOLOGIES AG 发明人 FRANKOWSKY GERD
分类号 G01R31/28;G06F11/273;G06F12/16;G11C11/401;G11C29/10;G11C29/12;G11C29/36;(IPC1-7):G01R31/28 主分类号 G01R31/28
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