发明名称 |
Vertical power devices having trench-based electrodes therein |
摘要 |
Vertical power devices include a semiconductor substrate having a drift region of first conductivity type therein and first and second stripe-shaped trenches that extend in the semiconductor substrate and define a drift region mesa therebetween. First and second insulated source electrodes are provided in the first and second stripe-shaped trenches, respectively. A UMOSFET, comprising a third trench that is shallower than the first and second stripe-shaped trenches, is provided in the drift region mesa. |
申请公布号 |
US6649975(B2) |
申请公布日期 |
2003.11.18 |
申请号 |
US20010992104 |
申请日期 |
2001.11.05 |
申请人 |
SILICON SEMICONDUCTOR CORPORATION |
发明人 |
BALIGA BANTVAL JAYANT |
分类号 |
H01L21/336;H01L23/552;H01L23/60;H01L23/66;H01L27/088;H01L29/06;H01L29/40;H01L29/417;H01L29/423;H01L29/78;(IPC1-7):H01L29/94;H01L29/96 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|