发明名称 |
Method for manufacturing a semiconductor component |
摘要 |
The invention relates to a method for producing a semiconductor component including semiconductor areas of different conductivity types which are alternately positioned in a semiconductor body. The semiconductor areas of different conductivity types extend at least from one first zone to a position near a second zone. Because of variable doping in trenches and in the trench fillings, an electric field is generated which increases from both the first zone and the second zone.
|
申请公布号 |
US6649459(B2) |
申请公布日期 |
2003.11.18 |
申请号 |
US20010817594 |
申请日期 |
2001.03.26 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
DEBOY GERALD;FRIZA WOLFGANG;HAEBERLEN OLIVER;RUEB MICHAEL;STRACK HELMUT |
分类号 |
H01L21/265;H01L21/336;H01L29/06;H01L29/10;H01L29/78;(IPC1-7):H01L21/338;H01L21/824;H01L21/823 |
主分类号 |
H01L21/265 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|