发明名称 Method for manufacturing a semiconductor component
摘要 The invention relates to a method for producing a semiconductor component including semiconductor areas of different conductivity types which are alternately positioned in a semiconductor body. The semiconductor areas of different conductivity types extend at least from one first zone to a position near a second zone. Because of variable doping in trenches and in the trench fillings, an electric field is generated which increases from both the first zone and the second zone.
申请公布号 US6649459(B2) 申请公布日期 2003.11.18
申请号 US20010817594 申请日期 2001.03.26
申请人 INFINEON TECHNOLOGIES AG 发明人 DEBOY GERALD;FRIZA WOLFGANG;HAEBERLEN OLIVER;RUEB MICHAEL;STRACK HELMUT
分类号 H01L21/265;H01L21/336;H01L29/06;H01L29/10;H01L29/78;(IPC1-7):H01L21/338;H01L21/824;H01L21/823 主分类号 H01L21/265
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