| 摘要 |
Leakage detection in a programming algorithm for a flash memory device. According to one embodiment of the present invention a method includes programming a first flash cell in an array of flash cells in a flash memory device, sequentially selecting flash cells connected to the first flash cell, testing each selected flash cell to determine if the selected flash cell is leaky, and applying a refresh pulse to the selected flash cell if the selected flash cell is leaky. According to another embodiment of the present invention a flash memory device includes an array of flash cells, a program circuit to apply a programming pulse to program a first flash cell in the array, and a control circuit including elements to sequentially select flash cells connected to the first flash cell, test each selected flash cell to determine if the selected flash cell is leaky, and cause the program circuit to apply a refresh pulse to the selected flash cell if the selected flash cell is leaky.
|
