发明名称 GROWING OF CRYSTALS USING ELECTRON BEAM HEATING AND ANNEALIZE
摘要 A method and apparatus for growing a crystal. The method comprising, positioning the crystal and providing material similar to the material of said crystal in a region of intense electron heating whereby said material and a part of said crystal is melted and fuses together, withdrawing the crystal from the region of intense electron heating so as to promote solidification and growth of the crystal, and passing said crystal through a region of less intense electron heating to anneal said crystal.
申请公布号 US3634045(A) 申请公布日期 1972.01.11
申请号 USD3634045 申请日期 1968.04.10
申请人 ATOMIC ENERGY AUTHORITY UK 发明人 RONALD ARTHUR DUGDALE;STANLEY DENIS FORD
分类号 C30B11/10;C30B15/16;(IPC1-7):B01J17/18;B01J17/24 主分类号 C30B11/10
代理机构 代理人
主权项
地址