THIN FILM RESONATOR APPARATUS AND METHOD OF MAKING SAME

摘要

A thin film resonator (TFR) is produced with an improved piezoelectric fi lm which is epitaxially grown on a growing surface, resulting in a piezoelectri c film with less grain boundaries. Epitaxial growth refers to the piezoelectric film having a crystallographic orientation taken from or emulating the crystallographic orientation of a single crystal substrate or growing surface. For example, by epitaxiall y growing a piezoelectric film on a single crystal silicon substrate as the growing surface, an improved piezoelectric film is produced with little or no grain boundaries. In accordance with another aspect of the present invention, a method of making a TFR is disclosed in which the piezoelectric film is grown on a substrate. Subsequently, a portion of the substrate is removed, and the electrodes are deposited on either side of the piezoelectric film.