发明名称 Buffer layer structure based on doped ceria for providing optimized lattice match with a YBCO layer in a conductor
摘要 A buffer layer structure based on doped ceria for providing optimized lattice match with a YBCO layer in a conductor, a lattice matching layer for use in said structure and process of manufacturing thereof. Said buffer layer comprises a CeO2 layer doped with a dopant, and has a superconductive layer of YBCO on said CeO2 layer. The invention is characterized in that the CeO2 layer is a lattice matching layer.
申请公布号 US6649570(B2) 申请公布日期 2003.11.18
申请号 US20010970790 申请日期 2001.10.05
申请人 NEXANS 发明人 BELOUET CHRISTIAN
分类号 H01B12/06;H01B13/00;H01L39/24;(IPC1-7):H01B12/00;H01F6/00;H01L39/00 主分类号 H01B12/06
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