发明名称 |
Method for plasma treating and plasma nitriding gate oxides |
摘要 |
A method for forming a nitrided gate oxide over a silicon substrate in a semiconductor device fabrication process including providing a silicon semiconductor substrate; thermally growing a gate oxide layer including silicon dioxide over the silicon substrate; plasma treating the gate oxide layer including a plasma supplied with a plasma source gas including at least one of helium, hydrogen, deuterium, and oxygen; plasma nitriding the gate oxide layer according to a plasma treatment including a plasma supplied with a plasma source gas including nitrogen; and, thermally annealing the silicon semiconductor substrate including the gate oxide layer according to at least one annealing treatment.
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申请公布号 |
US6649538(B1) |
申请公布日期 |
2003.11.18 |
申请号 |
US20020267955 |
申请日期 |
2002.10.09 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO. LTD. |
发明人 |
CHENG JUING-YI;LEE TZE-LIANG |
分类号 |
H01L21/28;H01L21/314;H01L21/316;H01L21/324;H01L29/51;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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