发明名称 Stereolithographic method and apparatus for fabricating spacers for semiconductor devices and resulting structures
摘要 Insulative spacers to be disposed on a surface of a semiconductor device component and methods of fabricating and placing the insulative spacers on semiconductor device components. Upon assembly of the semiconductor device component face-down upon a higher level substrate and establishing electrical communication between the semiconductor device component and the higher level substrate, the insulative spacers define a minimum, substantially uniform distance between the semiconductor device component and the higher level substrate. The insulative spacers also prevent tilting or tipping of the semiconductor device component relative to the higher level substrate. The insulative spacers may be preformed or fabricated on a surface of the semiconductor device component. A stereolithographic method for fabricating the insulative spacers is disclosed, which may employ a machine vision system to recognize the position and orientation of a substrate to which material is to be applied and control fabrication based upon the recognized position and orientation.
申请公布号 US6649444(B2) 申请公布日期 2003.11.18
申请号 US20010000438 申请日期 2001.10.24
申请人 MICRON TECHNOLOGY, INC. 发明人 EARNWORTH WARREN M.;WOOD ALAN G.
分类号 G03F7/20;H01L21/60;H05K1/02;H05K3/00;H05K3/30;(IPC1-7):H01L21/44;H01L21/48 主分类号 G03F7/20
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